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| ! " # $% & ' ( $% ) * +' "', - . / # 01 # 2 & # 01 # 2 & 3 4& / 5 6 & + 6 & 7 8 $ 9.$ . 9 . : 8 : 0 ; 7 $ 0$ . <8= 9 . >= : IRG4BC20SPBF standard speed igbt insulated gate bipolar transistor pd - 95639 e c g n-channel features ! "# $ % $ $ &$ ' !&#()**+," -). ! "# $ $ & % ! "# / %0 ) 0 &) '!1! "# = 23 4536! 4+, ? + / @@@ . + 6 7 a7 ) 6 8 . @@@ b? + / " < 7 -& @@@ % ? ? , . 9.c: @@@ 9d: to-220ab cb$b3 www.irf.com 1 2 www.irf.com e ) , 9 : f c 3 " e ) , 9 : f 3.$ . 3 6 a . % e ) , 9 : f 4 2- f c f + f !.c f 488 2- f 3 % "7 3% a f 3$ 3 7 + ? 4 6 , ( f . f - g g 488 6 , ( f . f / 6 a . !7 7 3 6 , ( f . c $. 4 2- f f 7 + f $ f "7 3% 488 2- f c f 7 + ? a f c% f - g g 6 , ( f $.3 f / 6 a . 7 3 ( f c. f h 0 8 & & & f f 4 & & f $! f &a $ 6 a . c +' 8 & f c. f i .0hd f f 7 j" %ff 7 ." ? ? & 88. 8 f .c f b 7 . " f .3 . " 6 f .% f !" 6 a .7 f .33 f " 7 ) , , $. f . 7 j" ? b ? & 88. 8 , , f f b 7 j" a . .% f 6 = 7 " f f 7 f f . 7 7 f f 7 7 ) ( f f * " * !"# k ) j" $ !"# # , %j l - 8 . m. # , .j 7 ,. +& ' l 7 & , <- 1. n & . 9 6 8 . $< : %m9 :7 7 ( jh7 + ? 7 96 8 . $: +& ' l & , <- 1 n & . www.irf.com 3 - 74! - 7, 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j o t = 150 c j o 1 10 100 5 6 7 8 9 10 11 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j o t = 150 c j o 0 5 1 0 1 5 2 0 2 5 3 0 0.1 1 10 10 0 f, frequency (khz) a 60% of rated voltage ideal diodes square wave: for both: duty cycle: 50% t = 125c t = 90c gate drive as specified sink j triangular wave: clamp voltage: 80% of rated power dissipation = 13w 4 www.irf.com ! " # ! 25 50 75 100 125 150 0 5 10 15 20 t , case temperature ( c) maximum dc collector current(a) c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 5 c i = a 10 c i = a 20 c . " www.irf.com 5 " # $ # $ " # %&# $ ' %&# ! 0 5 10 15 20 25 30 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 10a cc c -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = 50ohm v = 15v v = 480v g ge cc i = a 20 c i = a 10 c i = a 5 c ? 1 10 100 0 200 400 600 800 1000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 2.00 2.04 2.08 2.12 2.16 2.20 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 10a cc ge j c ( ? ) 6 www.irf.com %&# %( 0 4 8 12 16 20 0.0 2.0 4.0 6.0 8.0 i , collector-to-emitter current (a) total switching losses (mj) c r = 50ohm t = 150 c v = 480v v = 15v g j cc ge ? 1 10 100 1 10 100 100 0 v = 20v t = 125 c ge j o v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c safe operating area www.irf.com 7 d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v 7 ! - #7 87 7#7 480f 960v t=5 s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) $ - 9 5 0v driver* 1000v d.u.t . i c c v l $ - #7 8 www.irf.com data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector dimensions are shown in millimeters (inches) example: in the assembly line "c" t his is an irf1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r assembly lot code dat e code year 7 = 1997 line c week 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free" |
Price & Availability of IRG4BC20SPBF
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